SI4890DY-T1-E3
detaildesc

SI4890DY-T1-E3

Vishay Siliconix

型号:

SI4890DY-T1-E3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 11A 8-SOIC

购买数量:

递送:

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付款:

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库存 : 2500

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 2500

    $1.212333

    $3030.8325

  • 5000

    $1.166752

    $5833.76

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V
Product Status Active
Vgs(th) (Max) @ Id 800mV @ 250µA (Min)
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4890