SI4850EY-T1-GE3
detaildesc

SI4850EY-T1-GE3

Vishay Siliconix

型号:

SI4850EY-T1-GE3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 60V 6A 8SO

购买数量:

递送:

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付款:

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库存 : 231

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.615

    $1.615

  • 10

    $1.4497

    $14.497

  • 100

    $1.16489

    $116.489

  • 500

    $0.957106

    $478.553

  • 1000

    $0.793022

    $793.022

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 1.7W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4850