SI4816BDY-T1-E3
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SI4816BDY-T1-E3

Vishay Siliconix

型号:

SI4816BDY-T1-E3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET 2N-CH 30V 5.8A 8-SOIC

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 18.5mOhm @ 6.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30V
Series LITTLE FOOT®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 1W, 1.25W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 5.8A, 8.2A
Package Tape & Reel (TR)
Base Product Number SI4816