SI4800BDY-T1-E3
detaildesc

SI4800BDY-T1-E3

Vishay Siliconix

型号:

SI4800BDY-T1-E3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 6.5A 8SO

购买数量:

递送:

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付款:

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库存 : 6912

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.836

    $0.836

  • 10

    $0.73815

    $7.3815

  • 100

    $0.56582

    $56.582

  • 500

    $0.447317

    $223.6585

  • 1000

    $0.357856

    $357.856

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 18.5mOhm @ 9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.8V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.3W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4800