SI4590DY-T1-GE3
detaildesc

SI4590DY-T1-GE3

Vishay Siliconix

型号:

SI4590DY-T1-GE3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N/P CHAN 100V SO8 DUAL

购买数量:

递送:

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付款:

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库存 : 6863

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.874

    $0.874

  • 10

    $0.7543

    $7.543

  • 100

    $0.522405

    $52.2405

  • 500

    $0.436525

    $218.2625

  • 1000

    $0.371516

    $371.516

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 57mOhm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 100V
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology -
Power - Max 2.4W, 3.4W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3.4A, 2.8A
Package Tape & Reel (TR)
Base Product Number SI4590