SI4559ADY-T1-GE3
detaildesc

SI4559ADY-T1-GE3

Vishay Siliconix

型号:

SI4559ADY-T1-GE3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N/P-CH 60V 5.3A 8-SOIC

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 9357

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.425

    $1.425

  • 10

    $1.27775

    $12.7775

  • 100

    $0.99617

    $99.617

  • 500

    $0.822928

    $411.464

  • 1000

    $0.649676

    $649.676

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V, 650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V, 22nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 58mOhm @ 4.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 60V
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 3.1W, 3.4W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 5.3A, 3.9A
Package Tape & Reel (TR)
Base Product Number SI4559