SI4500BDY-T1-E3
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SI4500BDY-T1-E3

Vishay Siliconix

型号:

SI4500BDY-T1-E3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N/P-CH 20V 6.6A 8SOIC

购买数量:

递送:

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产品信息

参数信息

用户指南

FET Feature Logic Level Gate
Configuration N and P-Channel, Common Drain
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 9.1A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 20V
Series -
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 1.3W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 6.6A, 3.8A
Package Cut Tape (CT)
Base Product Number SI4500