SI4488DY-T1-GE3
detaildesc

SI4488DY-T1-GE3

Vishay Siliconix

型号:

SI4488DY-T1-GE3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 150V 3.5A 8SO

购买数量:

递送:

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付款:

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库存 : 1973

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.052

    $2.052

  • 10

    $1.70715

    $17.0715

  • 100

    $1.35888

    $135.888

  • 500

    $1.149861

    $574.9305

  • 1000

    $0.97564

    $975.64

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 50mOhm @ 5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 1.56W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SI4488