SI4463BDY-T1-E3
detaildesc

SI4463BDY-T1-E3

Vishay Siliconix

型号:

SI4463BDY-T1-E3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 20V 9.8A 8SO

购买数量:

递送:

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付款:

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库存 : 12750

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.463

    $1.463

  • 10

    $1.21315

    $12.1315

  • 100

    $0.965865

    $96.5865

  • 500

    $0.817228

    $408.614

  • 1000

    $0.693414

    $693.414

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11mOhm @ 13.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.4V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.5W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4463