SI4462DY-T1-E3
detaildesc

SI4462DY-T1-E3

Vishay Siliconix

型号:

SI4462DY-T1-E3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 200V 1.15A 8-SOIC

购买数量:

递送:

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产品信息

参数信息

用户指南

FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 480mOhm @ 1.5A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 200 V
Series -
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 1.15A (Ta)
Package Cut Tape (CT)
Base Product Number SI4462