SI4442DY-T1-E3
detaildesc

SI4442DY-T1-E3

Vishay Siliconix

型号:

SI4442DY-T1-E3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 15A 8SO

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 1543

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.869

    $2.869

  • 10

    $2.41205

    $24.1205

  • 100

    $1.951585

    $195.1585

  • 500

    $1.734776

    $867.388

  • 1000

    $1.485401

    $1485.401

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.5mOhm @ 22A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.6W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4442