SI4431BDY-T1-GE3
detaildesc

SI4431BDY-T1-GE3

Vishay Siliconix

型号:

SI4431BDY-T1-GE3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 5.7A 8SO

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 1655

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.0165

    $1.0165

  • 10

    $0.90535

    $9.0535

  • 100

    $0.70623

    $70.623

  • 500

    $0.583376

    $291.688

  • 1000

    $0.46056

    $460.56

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 30mOhm @ 7.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.5W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4431