SI4431BDY-T1-E3
detaildesc

SI4431BDY-T1-E3

Vishay Siliconix

型号:

SI4431BDY-T1-E3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 5.7A 8SO

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 46120

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.9215

    $0.9215

  • 10

    $0.81985

    $8.1985

  • 100

    $0.63935

    $63.935

  • 500

    $0.528143

    $264.0715

  • 1000

    $0.416955

    $416.955

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 30mOhm @ 7.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.5W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4431