SI4425FDY-T1-GE3
detaildesc

SI4425FDY-T1-GE3

Vishay Siliconix

型号:

SI4425FDY-T1-GE3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 12.7/18.3A 8SOIC

购买数量:

递送:

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付款:

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库存 : 9977

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.6555

    $0.6555

  • 10

    $0.56525

    $5.6525

  • 100

    $0.3914

    $39.14

  • 500

    $0.327047

    $163.5235

  • 1000

    $0.278331

    $278.331

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.3W (Ta), 4.8W (Tc)
Series TrenchFET® Gen IV
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 18.3A (Tc)
Vgs (Max) +16V, -20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4425