SI4276DY-T1-E3
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SI4276DY-T1-E3

Vishay Siliconix

型号:

SI4276DY-T1-E3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET 2N-CH 30V 8A 8SO

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 15.3mOhm @ 9.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30V
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 3.6W, 2.8W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 8A
Package Tape & Reel (TR)
Base Product Number SI4276