SI4155DY-T1-GE3
detaildesc

SI4155DY-T1-GE3

Vishay Siliconix

型号:

SI4155DY-T1-GE3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

P-CHANNEL 30-V (D-S) MOSFET SO-8

购买数量:

递送:

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付款:

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库存 : 3161

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.741

    $0.741

  • 10

    $0.6441

    $6.441

  • 100

    $0.446025

    $44.6025

  • 500

    $0.372685

    $186.3425

  • 1000

    $0.317176

    $317.176

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 15mOhm @ 7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta), 4.5W (Tc)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 10.2A (Ta), 13.6A (Tc)
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4155