SI4143DY-T1-GE3
detaildesc

SI4143DY-T1-GE3

Vishay Siliconix

Product No:

SI4143DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

-

Datasheet:

pdf

Description:

MOSFET P-CHANNEL 30V 25.3A 8SO

Quantity:

Delivery:

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Payment:

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In Stock : 8221

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.7125

    $0.7125

  • 10

    $0.6194

    $6.194

  • 100

    $0.428545

    $42.8545

  • 500

    $0.358074

    $179.037

  • 1000

    $0.304741

    $304.741

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TA)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6630 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 167 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.2mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 6W (Tc)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 25.3A (Tc)
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4143