SI3590DV-T1-E3
detaildesc

SI3590DV-T1-E3

Vishay Siliconix

型号:

SI3590DV-T1-E3

封装:

6-TSOP

批次:

-

数据手册:

pdf

描述:

MOSFET N/P-CH 30V 2.5A 6TSOP

购买数量:

递送:

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付款:

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库存 : 88

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.6935

    $0.6935

  • 10

    $0.61465

    $6.1465

  • 100

    $0.470915

    $47.0915

  • 500

    $0.372286

    $186.143

  • 1000

    $0.297825

    $297.825

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 77mOhm @ 3A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 30V
Series TrenchFET®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Power - Max 830mW
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 2.5A, 1.7A
Package Tape & Reel (TR)
Base Product Number SI3590