SI3529DV-T1-GE3
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SI3529DV-T1-GE3

Vishay Siliconix

型号:

SI3529DV-T1-GE3

封装:

6-TSOP

批次:

-

数据手册:

pdf

描述:

MOSFET N/P-CH 40V 2.5A 6-TSOP

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 125mOhm @ 2.2A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 40V
Series TrenchFET®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Power - Max 1.4W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 2.5A, 1.95A
Package Tape & Reel (TR)
Base Product Number SI3529