SI3499DV-T1-BE3
detaildesc

SI3499DV-T1-BE3

Vishay Siliconix

型号:

SI3499DV-T1-BE3

封装:

6-TSOP

批次:

-

数据手册:

pdf

描述:

P-CHANNEL 1.5-V (G-S) MOSFET

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2405

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.9215

    $0.9215

  • 10

    $0.75145

    $7.5145

  • 100

    $0.584345

    $58.4345

  • 500

    $0.495292

    $247.646

  • 1000

    $0.403465

    $403.465

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 750mV @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 8 V
Power Dissipation (Max) 1.1W (Ta)
Series TrenchFET®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Vgs (Max) ±5V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)