SI3475DV-T1-GE3
detaildesc

SI3475DV-T1-GE3

Vishay Siliconix

型号:

SI3475DV-T1-GE3

封装:

6-TSOP

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 200V 0.95A 6-TSOP

购买数量:

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产品信息

参数信息

用户指南

FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 50 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.61Ohm @ 900mA, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 200 V
Series -
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 950mA (Tc)
Package Cut Tape (CT)
Base Product Number SI3475