SI3460BDV-T1-GE3
detaildesc

SI3460BDV-T1-GE3

Vishay Siliconix

型号:

SI3460BDV-T1-GE3

封装:

6-TSOP

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 20V 8A 6TSOP

购买数量:

递送:

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付款:

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库存 : 3000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.8265

    $0.8265

  • 10

    $0.72865

    $7.2865

  • 100

    $0.558315

    $55.8315

  • 500

    $0.44137

    $220.685

  • 1000

    $0.353096

    $353.096

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 8 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 2W (Ta), 3.5W (Tc)
Series TrenchFET®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI3460