SI3442BDV-T1-BE3
detaildesc

SI3442BDV-T1-BE3

Vishay Siliconix

型号:

SI3442BDV-T1-BE3

封装:

6-TSOP

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 2.5-V (G-S) MOSFET

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 1507

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.5415

    $0.5415

  • 10

    $0.4674

    $4.674

  • 100

    $0.323855

    $32.3855

  • 500

    $0.270579

    $135.2895

  • 1000

    $0.23028

    $230.28

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 57mOhm @ 4A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.8V @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 860mW (Ta)
Series -
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)