SI3430DV-T1-E3
detaildesc

SI3430DV-T1-E3

Vishay Siliconix

型号:

SI3430DV-T1-E3

封装:

6-TSOP

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 100V 1.8A 6TSOP

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 7824

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.14

    $1.14

  • 10

    $1.01935

    $10.1935

  • 100

    $0.794485

    $79.4485

  • 500

    $0.656298

    $328.149

  • 1000

    $0.51813

    $518.13

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 170mOhm @ 2.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 1.14W (Ta)
Series -
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number SI3430