SI2371EDS-T1-GE3
detaildesc

SI2371EDS-T1-GE3

Vishay Siliconix

型号:

SI2371EDS-T1-GE3

封装:

SOT-23

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 4.8A SOT-23

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 337

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.3895

    $0.3895

  • 10

    $0.2926

    $2.926

  • 100

    $0.182305

    $18.2305

  • 500

    $0.124735

    $62.3675

  • 1000

    $0.09595

    $95.95

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 45mOhm @ 3.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package SOT-23
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Series TrenchFET®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI2371