SI2369DS-T1-GE3
detaildesc

SI2369DS-T1-GE3

Vishay Siliconix

型号:

SI2369DS-T1-GE3

封装:

SOT-23-3 (TO-236)

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 7.6A TO236

购买数量:

递送:

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付款:

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库存 : 106456

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.38

    $0.38

  • 10

    $0.32585

    $3.2585

  • 100

    $0.243105

    $24.3105

  • 500

    $0.191045

    $95.5225

  • 1000

    $0.14762

    $147.62

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1295 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 29mOhm @ 5.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Series TrenchFET®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI2369