SI2356DS-T1-BE3
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SI2356DS-T1-BE3

Vishay Siliconix

型号:

SI2356DS-T1-BE3

封装:

SOT-23-3 (TO-236)

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 40-V (D-S) MOSFET

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 370 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 51mOhm @ 3.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 960mW (Ta), 1.7W (Tc)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta), 4.3A (Tc)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)