SI2325DS-T1-BE3
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SI2325DS-T1-BE3

Vishay Siliconix

型号:

SI2325DS-T1-BE3

封装:

SOT-23-3 (TO-236)

批次:

-

数据手册:

pdf

描述:

P-CHANNEL 150-V (D-S) MOSFET

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 750mW (Ta)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 530mA (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)