SI2318DS-T1-BE3
detaildesc

SI2318DS-T1-BE3

Vishay Siliconix

型号:

SI2318DS-T1-BE3

封装:

SOT-23-3 (TO-236)

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 40-V (D-S) MOSFET

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2960

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.4845

    $0.4845

  • 10

    $0.4123

    $4.123

  • 100

    $0.2869

    $28.69

  • 500

    $0.223991

    $111.9955

  • 1000

    $0.182068

    $182.068

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 45mOhm @ 3.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 750mW (Ta)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)