SI2309DS-T1-E3
Vishay Siliconix
型号:
SI2309DS-T1-E3
品牌:
封装:
SOT-23-3 (TO-236)
批次:
-
数据手册:
描述:
MOSFET P-CH 60V 1.25A SOT23-3
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 1.25A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Series | TrenchFET® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 1.25A (Ta) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI2309 |
