SI2307BDS-T1-GE3
detaildesc

SI2307BDS-T1-GE3

Vishay Siliconix

型号:

SI2307BDS-T1-GE3

封装:

SOT-23-3 (TO-236)

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 2.5A SOT23-3

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 2134

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.5415

    $0.5415

  • 10

    $0.475

    $4.75

  • 100

    $0.364135

    $36.4135

  • 500

    $0.28785

    $143.925

  • 1000

    $0.23028

    $230.28

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 78mOhm @ 3.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 750mW (Ta)
Series TrenchFET®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SI2307