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SI2301BDS-T1-BE3
Vishay Siliconix
型号:
SI2301BDS-T1-BE3
品牌:
封装:
SOT-23-3 (TO-236)
批次:
-
数据手册:
描述:
P-CHANNEL 2.5-V (G-S) MOSFET
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 375 pF @ 6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.8A, 4.5V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Series | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Vgs (Max) | ±8V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Package | Tape & Reel (TR) |
