SI1079X-T1-GE3
detaildesc

SI1079X-T1-GE3

Vishay Siliconix

型号:

SI1079X-T1-GE3

封装:

SC-89-6

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 1.44A SC89-6

购买数量:

递送:

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付款:

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库存 : 6000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.4275

    $0.4275

  • 10

    $0.3325

    $3.325

  • 100

    $0.1995

    $19.95

  • 500

    $0.184699

    $92.3495

  • 1000

    $0.1256

    $125.6

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 100mOhm @ 1.4A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package SC-89-6
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 330mW (Ta)
Series -
Package / Case SOT-563, SOT-666
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 1.44A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI1079