SI1072X-T1-GE3
detaildesc

SI1072X-T1-GE3

Vishay Siliconix

型号:

SI1072X-T1-GE3

封装:

SC-89 (SOT-563F)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V SC89-6

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 93mOhm @ 1.3A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SC-89 (SOT-563F)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 236mW (Ta)
Series TrenchFET®
Package / Case SOT-563, SOT-666
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI1072