SCTWA35N65G2VAG
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SCTWA35N65G2VAG

STMicroelectronics

型号:

SCTWA35N65G2VAG

封装:

TO-247 Long Leads

批次:

-

数据手册:

pdf

描述:

SICFET N-CH 650V 45A TO247

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 72mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.2V @ 1mA
Supplier Device Package TO-247 Long Leads
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 208W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Vgs (Max) +20V, -5V
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Package Tube
Base Product Number SCTWA35