SCTWA30N120
detaildesc

SCTWA30N120

STMicroelectronics

型号:

SCTWA30N120

封装:

HiP247™ Long Leads

批次:

-

数据手册:

pdf

描述:

IC POWER MOSFET 1200V HIP247

购买数量:

递送:

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付款:

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库存 : 414

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $30.1055

    $30.1055

  • 10

    $27.76185

    $277.6185

  • 25

    $26.51374

    $662.8435

  • 100

    $23.706585

    $2370.6585

  • 250

    $22.614788

    $5653.697

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1mA (Typ)
Supplier Device Package HiP247™ Long Leads
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 270W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number SCTWA30