SCTWA20N120
detaildesc

SCTWA20N120

STMicroelectronics

型号:

SCTWA20N120

封装:

HiP247™ Long Leads

批次:

-

数据手册:

pdf

描述:

IC POWER MOSFET 1200V HIP247

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 546

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $17.404

    $17.404

  • 10

    $15.99135

    $159.9135

  • 25

    $15.32844

    $383.211

  • 100

    $13.505485

    $1350.5485

  • 250

    $12.84267

    $3210.6675

  • 500

    $12.014118

    $6007.059

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 239mOhm @ 10A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1mA (Typ)
Supplier Device Package HiP247™ Long Leads
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 175W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number SCTWA20