SCTW40N120G2VAG
STMicroelectronics
型号:
SCTW40N120G2VAG
封装:
HiP247™
批次:
-
数据手册:
描述:
SICFET N-CH 1200V 33A HIP247
购买数量:
递送:
付款:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 200°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | HiP247™ |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 290W (Tc) |
| Series | Automotive, AEC-Q101 |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Mfr | STMicroelectronics |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Vgs (Max) | +22V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tube |
| Base Product Number | SCTW40 |
.jpg)
