SCT4062KEC11

Rohm Semiconductor

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SCT4062KEC11

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Package:

TO-247N

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Description:

1200V, 62M, 3-PIN THD, TRENCH-ST

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Operating Temperature	175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1498 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	81mOhm @ 12A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 6.45mA
Supplier Device Package	TO-247N
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	115W
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Vgs (Max)	+21V, -4V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT4062