SCT3080ALGC11
detaildesc

SCT3080ALGC11

Rohm Semiconductor

型号:

SCT3080ALGC11

封装:

TO-247N

批次:

-

数据手册:

pdf

描述:

SICFET N-CH 650V 30A TO247N

购买数量:

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库存 : 1165

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数量

单价

总价

  • 1

    $11.3715

    $11.3715

  • 10

    $9.74795

    $97.4795

  • 100

    $8.123165

    $812.3165

  • 500

    $7.167465

    $3583.7325

  • 1000

    $6.450718

    $6450.718

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产品信息

参数信息

用户指南

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 571 pF @ 500 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 104mOhm @ 10A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.6V @ 5mA
Supplier Device Package TO-247N
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 134W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Vgs (Max) +22V, -4V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number SCT3080