SCT3060ALGC11
detaildesc

SCT3060ALGC11

Rohm Semiconductor

型号:

SCT3060ALGC11

封装:

TO-247N

批次:

-

数据手册:

pdf

描述:

SICFET N-CH 650V 39A TO247N

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 405

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $12.958

    $12.958

  • 10

    $11.9111

    $119.111

  • 100

    $10.05955

    $1005.955

  • 500

    $8.948677

    $4474.3385

  • 1000

    $8.208104

    $8208.104

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 852 pF @ 500 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.6V @ 6.67mA
Supplier Device Package TO-247N
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 165W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Vgs (Max) +22V, -4V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number SCT3060