SCT20N120AG
detaildesc

SCT20N120AG

STMicroelectronics

型号:

SCT20N120AG

封装:

HiP247™

批次:

-

数据手册:

pdf

描述:

SICFET N-CH 1200V 20A HIP247

购买数量:

递送:

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付款:

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库存 : 438

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $19.4465

    $19.4465

  • 10

    $17.13135

    $171.3135

  • 100

    $14.81658

    $1481.658

  • 500

    $13.427547

    $6713.7735

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 239mOhm @ 10A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1mA
Supplier Device Package HiP247™
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 153W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number SCT20