SCT2080KEC
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SCT2080KEC

Rohm Semiconductor

型号:

SCT2080KEC

封装:

TO-247

批次:

-

数据手册:

pdf

描述:

SICFET N-CH 1200V 40A TO247

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 117mOhm @ 10A, 18V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 4.4mA
Supplier Device Package TO-247
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 262W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Vgs (Max) +22V, -6V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number SCT2080