SCT10N120AG
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SCT10N120AG

STMicroelectronics

型号:

SCT10N120AG

封装:

HiP247™

批次:

-

数据手册:

pdf

描述:

SICFET N-CH 1200V 12A HIP247

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package HiP247™
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 150W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number SCT10