S2M0080120K
SMC Diode Solutions
型号:
S2M0080120K
封装:
TO-247-4
批次:
-
数据手册:
描述:
MOSFET SILICON CARBIDE SIC 1200V
购买数量:
递送:
付款:
库存 : 260
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$13.889
$13.889
10
$12.23885
$122.3885
100
$10.585185
$1058.5185
500
$9.592834
$4796.417
1000
$8.798948
$8798.948
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1324 pF @ 1000 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 20 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 231W (Tc) |
| Series | - |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Mfr | SMC Diode Solutions |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Vgs (Max) | +25V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Package | Tube |
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