RX3L18BBGC16

Rohm Semiconductor

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RX3L18BBGC16

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Package:

TO-220AB

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Description:

NCH 60V 240A, TO-220AB, POWER MO

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.84mOhm @ 90A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	192W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	240A (Ta), 180A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	RX3L18