RX3G18BBGC16
detaildesc

RX3G18BBGC16

Rohm Semiconductor

型号:

RX3G18BBGC16

封装:

TO-220AB

批次:

-

数据手册:

pdf

描述:

NCH 40V 270A, TO-220AB, POWER MO

购买数量:

递送:

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付款:

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库存 : 1000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $6.973

    $6.973

  • 10

    $5.98025

    $59.8025

  • 100

    $4.98313

    $498.313

  • 500

    $4.396904

    $2198.452

  • 1000

    $3.957216

    $3957.216

  • 2000

    $3.708059

    $7416.118

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.47mOhm @ 90A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 192W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 270A (Ta), 180A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number RX3G18