RW1A013ZPT2R
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RW1A013ZPT2R

Rohm Semiconductor

型号:

RW1A013ZPT2R

封装:

6-WEMT

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 12V 1.5A 6WEMT

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 6 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 260mOhm @ 1.3A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package 6-WEMT
Drain to Source Voltage (Vdss) 12 V
Power Dissipation (Max) 400mW (Ta)
Series -
Package / Case 6-SMD, Flat Leads
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number RW1A013