RV8C010UNHZGG2CR
detaildesc

RV8C010UNHZGG2CR

Rohm Semiconductor

型号:

RV8C010UNHZGG2CR

封装:

DFN1010-3W

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 20V 1A DFN1010-3W

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 7942

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.551

    $0.551

  • 10

    $0.47405

    $4.7405

  • 100

    $0.32927

    $32.927

  • 500

    $0.257108

    $128.554

  • 1000

    $0.208981

    $208.981

  • 2000

    $0.186818

    $373.636

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
FET Type N-Channel
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 470mOhm @ 500mA, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package DFN1010-3W
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1W
Series Automotive, AEC-Q101
Package / Case 3-XFDFN
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Vgs (Max) ±8V
Package Tape & Reel (TR)
Base Product Number RV8C010