RT1E040RPTR
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RT1E040RPTR

Rohm Semiconductor

型号:

RT1E040RPTR

封装:

8-TSST

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 4A 8TSST

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 45mOhm @ 4A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-TSST
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 550mW (Ta)
Series -
Package / Case 8-SMD, Flat Lead
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Package Tape & Reel (TR)
Base Product Number RT1E040